In this work, we investigate magneto-acoustic attenuation in thin film multiferroic Lamb wave delay lines. By leveraging magneto-acoustic interactions, multiferroics have potential to realize passive chip-scale alternatives to bulky ferrite devices. For the first time, magnetic field dependence of magneto-acoustic interactions in multiferroic Lamb wave devices is characterized. Multiferroic heterostructures of aluminum nitride and cobalt iron boron are fabricated into Lamb wave delay lines operating at 7.492 GHz to study the effect of strain nonuniformity on the multiferroic coupling. The attenuation of the Lamb waves is characterized as a function of the magnitude and angle of an applied in-plane bias magnetic field. It is found that the bias magnitude for peak attenuation is a strong function of angle, indicating that it is due to coupling between the Lamb waves and spin wave modes. This is in contrast with current models of attenuation in multiferroic SAW delay lines, where the uniform surface strains couple to ferromagnetic resonance, which has no angular dependence on the in-plane bias field magnitude. These results are the first steps towards passive chip-scale alternatives to ferrite devices utilizing Lamb wave devices, which have better coupling and scalability than their SAW counterparts. [2020-0114]

中文翻译：

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多铁异质结构中兰姆波和自旋波的 JMEMS 字母耦合

在这项工作中，我们研究了薄膜多铁性兰姆波延迟线中的磁声衰减。通过利用磁声相互作用，多铁性有可能实现无源芯片级替代笨重的铁氧体器件。首次表征了多铁性兰姆波器件中磁声相互作用的磁场依赖性。将氮化铝和钴铁硼的多铁异质结构制成工作在 7.492 GHz 的兰姆波延迟线，以研究应变非均匀性对多铁耦合的影响。兰姆波的衰减被表征为所施加的面内偏置磁场的幅度和角度的函数。发现峰值衰减的偏置幅度是角度的强函数，表明这是由于兰姆波和自旋波模式之间的耦合。这与多铁性 SAW 延迟线中的当前衰减模型形成对比，其中均匀的表面应变耦合到铁磁共振，其与面内偏置场大小没有角度相关性。这些结果是利用兰姆波器件替代铁氧体器件的无源芯片级替代品的第一步，该器件具有比 SAW 同类器件更好的耦合和可扩展性。[2020-0114] 这些结果是利用兰姆波器件替代铁氧体器件的无源芯片级替代品的第一步，该器件具有比 SAW 同类器件更好的耦合和可扩展性。[2020-0114] 这些结果是利用兰姆波器件替代铁氧体器件的无源芯片级替代品的第一步，该器件具有比 SAW 同类器件更好的耦合和可扩展性。[2020-0114]