CMOS compatibility and 8-inch manufacturability have been highly desired in MEMS technology. In this article, we demonstrate a MEMS pyroelectric IR detector using CMOS compatible AlN and 8-inch semiconductor wafer technology. This AlN pyroelectric detector detects IR over wavelength ranging from 5 $\mu \text{m}$ to 14 $\mu \text{m}$ . In addition, this detector is designed to have added mechanical stiffness for improved device integrity. The detectors are fabricated with different sensing area dimensions to compare their performance. The best performing detector has an NEP $\sim \,\,8.87\times 10^{\text {-9}}\,\,\text {W/}\sqrt {\text {Hz}} $ and ${D} ^\ast \,\,\sim \,\,6.04\times 10^{{6}}\,\,{\text {cm}\sqrt {\text {Hz}}}/ \text {W}$ . These pyroelectric detectors are designed and built with the consideration to enable ease of monolithic integration with other components to form an integrated gas sensor system. This includes enabling detection of illumination from the front side and using an absorber stack that consists of CMOS dielectric layers. Subsequently, they will form a crucial part of the architectures for miniature photonics-based gas sensors. Their performance is a first step towards 8-inch wafer level CMOS-compatible manufacturable photonics gas sensors. [2020-0157]

中文翻译：

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8 英寸晶圆级 CMOS 兼容 AlN 热释电 5-14 μm 波长红外探测器对微型集成光子学气体传感器的考虑

MEMS 技术非常需要 CMOS 兼容性和 8 英寸可制造性。在本文中，我们展示了使用 CMOS 兼容的 AlN 和 8 英寸半导体晶圆技术的 MEMS 热释电红外探测器。这种 AlN 热释电探测器可检测波长范围为 5 $\mu \text{m}$ 到 14 $\mu \text{m}$ . 此外，该探测器设计为增加了机械刚度，以提高设备的完整性。检测器制造有不同的传感区域尺寸以比较它们的性能。性能最好的检测器具有新经济政策 $\sim \,\,8.87\times 10^{\text {-9}}\,\,\text {W/}\sqrt {\text {Hz}} $ 和 ${D} ^\ast \,\,\sim \,\,6.04\times 10^{{6}}\,\,{\text {cm}\sqrt {\text {Hz}}}/ \text {W}$ . 这些热释电探测器的设计和制造考虑到能够轻松地与其他组件进行单片集成，以形成集成的气体传感器系统。这包括能够从正面检测照明并使用由 CMOS 介电层组成的吸收器堆栈。随后，它们将成为基于微型光子学的气体传感器架构的关键部分。它们的性能是迈向 8 英寸晶圆级 CMOS 兼容可制造光子气体传感器的第一步。[2020-0157]