With the advantages of high-power density, easy series connection, and failure short-circuit mode, the press pack packaging technology has been widely adapted in insulated gate bipolar transistors (IGBTs) which are applied for high-voltage and high-power density power apparatuses. Accurate modeling of temperature field in the press pack IGBTs (PP IGBTs) is vitally significant with the increasing power density. First, the heat dissipation structure in the PP IGBTs is analyzed in detail in this article. Then, a physical network model is established, which has physical meaning and can be applied in structural design of the PP IGBTs. The heat spreading and thermal coupling effects which mainly are introduced by larger size electrode plates have been considered in the proposed model. For accurate and fast extraction of thermal resistance, an analytical method is proposed and compared with the traditional fixed angle method and finite element method (FEM), respectively. The comparison result shows that the proposed analytical method has enough accuracy, good convergency, and low calculated amount. The proposed new model not only could be fast set by using the analytical method but also can reflect the influence of submodule position, heat dissipation condition, and adjacent submodules, which cannot be contained in the conventional model. The proposed model has maintained accuracy close to the 3-D FEM model, but its calculation amount is much less. The accuracy of the proposed model is also verified through an experiment. Moreover, based on the analytical solution derived, the influence of different factors on submodule path thermal resistance and coupling thermal resistances is revealed and discussed.

中文翻译：

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考虑扩散和耦合效应的压装IGBT的物理热网络模型

凭借高功率密度，易于串联连接和故障短路模式的优势，压装包装技术已广泛应用于绝缘栅双极型晶体管（IGBT），该晶体管可用于高压和高功率密度电源仪器。随着功率密度的增加，压装IGBT（PP IGBT）中温度场的准确建模至关重要。首先，本文将详细分析PP IGBT的散热结构。然后，建立具有物理意义的物理网络模型，并将其应用于PP IGBT的结构设计中。在模型中考虑了主要由较大尺寸的电极板引入的热扩散和热耦合效应。为了准确，快速地提取热阻，提出了一种分析方法，并将其与传统的固定角法和有限元法分别进行了比较。比较结果表明，所提出的分析方法准确度高，收敛性好，计算量小。所提出的新模型不仅可以通过解析方法快速设置，而且可以反映子模块位置，散热条件和相邻子模块的影响，这是常规模型所不能包含的。所提出的模型保持了接近于3-D FEM模型的精度，但是其计算量却少得多。通过实验也验证了所提出模型的准确性。而且，根据导出的解析解，