This article presents the improved formulations for the latency insertion method (LIM) for diodes and MOSFETs utilizing the voltage-in-current framework. LIM is a fast circuit simulation algorithm, which computes the solutions to the voltages and currents in a circuit in a leapfrog manner, instead of a simultaneous matrix solution typically performed in the modified nodal analysis formalism. This allows LIM to have a far superior scaling with respect to the dimensions of the circuit. The formulations presented here have the advantage of not being limited by the stability condition in LIM and thus allow the simulations to be performed at larger time steps. Numerical examples are presented, which illustrate the improved performances of the developed formulations.

中文翻译：

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二极管和MOSFET的电压电流延迟插入方法

本文介绍了使用电流电压框架的二极管和MOSFET的延迟插入方法（LIM）的改进公式。LIM是一种快速的电路仿真算法，它以跨越式的方式计算电路中电压和电流的解，而不是通常在修改后的节点分析形式中执行的同时矩阵解。相对于电路尺寸，这使LIM具有极好的缩放比例。此处介绍的公式具有不受LIM中稳定性条件限制的优点，因此可以在较大的时间步长执行仿真。给出了数值示例，这些示例说明了所开发配方的改进性能。