A 650-V and 10-A silicon carbide (SiC) stacked cascode assembly has been proposed and demonstrated, in which a low-voltage Si-MOSFET (LV Si-MOSFET) is stacked on a high-voltage SiC buried gate static induction transistor (HV SiC-BGSIT). This is achieved by mounting Al bumps on the source pad of the HV SiC-BGSIT die and inserting a stacked Ag paste/epoxy layer between the HV SiC-BGSIT die and LV Si-MOSFET die. The epoxy layer is used to electrically separate the wire bonded on the gate pad of the HV SiC-BGSIT from the bottom electrode of the LV Si-MOSFET. The results of the measured static characteristics at temperatures from room temperature to 400 K and hard switching characteristics at room temperature of the fabricated stacked cascode sample verify that the proposed stacked cascode assembly successfully performs as a SiC cascode switching device. Thus, the proposed assembly contributes to the reduction in the footprint and parasitics for the conventional discrete packages and modules using the SiC cascode configuration.

中文翻译：

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埋入式栅极静电感应晶体管堆叠SiC级联组件

已经提出并演示了650V和10A的碳化硅（SiC）层叠共源共栅组件，其中将低压Si-MOSFET（LV Si-MOSFET）层叠在高压SiC埋栅静态感应晶体管上（HV SiC-BGSIT）。这是通过将Al凸块安装在HV SiC-BGSIT芯片的源极焊盘上，并在HV SiC-BGSIT芯片和LV Si-MOSFET芯片之间插入堆叠的Ag浆/环氧树脂层来实现的。环氧树脂层用于将结合在HV SiC-BGSIT栅极焊盘上的导线与LV Si-MOSFET的底部电极电隔离。所制造的堆叠共源共栅样品在室温至400 K的温度下测得的静态特性和室温下的硬开关特性的结果验证了所提出的堆叠共源共栅组件能够成功用作SiC共源共栅开关器件。因此，提出的组件有助于减少使用SiC共源共栅配置的传统分立封装和模块的占地面积和寄生虫。