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Slow degradation of a multiemitter 638-nm high-power broad-area laser diode during long-term aging
Optical Engineering ( IF 1.1 ) Pub Date : 2020-10-05 , DOI: 10.1117/1.oe.59.10.106101
Kyosuke Kuramoto 1 , Shinji Abe 1 , Motoharu Miyashita 1 , Takehiro Nishida 1 , Tetsuya Yagi 1
Affiliation  

Abstract. Laser-based displays have attracted much attention because they are the only displays that can express the full color gamut of Ultra-High Definition Television (U-HDTV), International Telecommunication Union Radio Communication Sector Broadcasting Service (ITU-R BT).2020. We have developed 638-nm broad-area laser diode (LD) with 75-μm-wide dual emitters and achieved wall plug efficiency of over 40.5% at 25°C. But slow degradation is still a factor limiting the lifetime due to the requirement for a high temperature and high-power operation. We performed the long-term aging test of 638-nm LDs under the different conditions, including a high-power operation such as 1.3 to 2.5 W, and investigated the behavior of output power characteristics, especially the dependence of its output characteristics on temperature. After long-term aging, the threshold current of the LD increased and its slope efficiency (SE) decreased. The measured dependence of the output characteristics of the LD on temperature was converted into that on the junction temperature using the thermal resistance between the junction and package. The latter dependence showed an increase of threshold current and no change of SE. This result indicates that the slow degradation of the red broad-area LD was caused by the increase of the nonradiative recombination rate in the active layer during aging.

中文翻译:

长期老化过程中多发射器 638 纳米高功率广域激光二极管的缓慢退化

摘要。基于激光的显示器备受关注,因为它们是唯一可以表达超高清电视 (U-HDTV)、国际电信联盟无线电通信部门广播服务 (ITU-R BT) 2020 全色域的显示器。我们已经开发出具有 75 微米宽双发射器的 638 纳米广域激光二极管 (LD),并在 25°C 下实现了超过 40.5% 的壁插效率。但由于需要高温和高功率操作,缓慢退化仍然是限制寿命的一个因素。我们在不同条件下对 638 nm LD 进行了长期老化测试,包括 1.3 至 2.5 W 等高功率操作,并研究了输出功率特性的行为,尤其是其输出特性对温度的依赖性。经过长时间的老化,LD的阈值电流增加,其斜率效率(SE)降低。使用结和封装之间的热阻将测得的 LD 输出特性对温度的依赖性转换为对结温的依赖性。后者的依赖性显示阈值电流增加而 SE 没有变化。该结果表明红色广域LD的缓慢退化是由于老化过程中活性层中非辐射复合率的增加引起的。后者的依赖性显示阈值电流增加而 SE 没有变化。该结果表明红色广域LD的缓慢退化是由于老化过程中活性层中非辐射复合率的增加引起的。后者的依赖性显示阈值电流增加而 SE 没有变化。该结果表明红色广域LD的缓慢退化是由于老化过程中活性层中非辐射复合率的增加引起的。
更新日期:2020-10-05
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