4H-SiC is a promising next-generation semiconductor, though its high-quality surface is difficult to achieve at high efficiency. In this research, two kinds of polystyrene (PS)/CeO 2 core/shell abrasives have been developed for formulating polishing slurry and employed in electrochemical mechanical polishing (ECMP) of 4H-SiC. The abrasives were synthesized by an in situ chemical precipitation process (PS/CeO 2 -A) and an electrostatic attraction process (PS/CeO 2 -B), respectively. The scanning electron microscope results showed PS/CeO 2 -B possesses more regular morphology than PS/CeO 2 -A. Their Young’s moduli ( E a ) measured by an atomic force microscopy showed that PS/CeO 2 -A has a larger E a than PS/CeO 2 -B, and it can increase by ∼68% when considering the abrasive bottom deformation. Subsequently, the polishing tests were conducted using PS/CeO 2 -A, PS/CeO 2

中文翻译：

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聚苯乙烯/ CeO 2核/壳磨料对4H-SiC抛光的材料去除率

4H-SiC是难以实现的高质量半导体表面，是一种很有前景的下一代半导体。在这项研究中，已开发出两种聚苯乙烯（PS）/ CeO 2核/壳磨料来配制抛光浆，并用于4H-SiC的电化学机械抛光（ECMP）。分别通过原位化学沉淀法（PS / CeO 2 -A）和静电吸引法（PS / CeO 2 -B）合成磨料。扫描电子显微镜结果表明，PS / CeO 2 -B比PS / CeO 2 -A具有更规则的形态。通过原子力显微镜测量的杨氏模量（E a）显示PS / CeO 2 -A具有比PS / CeO 2 -B大的E a，考虑到磨料底部变形，它可以增加约68％。后来，