Spatial Atomic Layer Deposition of Molybdenum Oxide for Industrial Solar Cells,Advanced Materials Interfaces

当前位置： X-MOL 学术 › Adv. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Spatial Atomic Layer Deposition of Molybdenum Oxide for Industrial Solar Cells
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-10-05 , DOI: 10.1002/admi.202000895
Geoffrey Gregory ₁ , Christoph Luderer ₂ , Haider Ali _{1,

3} , Tamil S. Sakthivel _{1,

4} , Titel Jurca _{4,

5,

6} , Martin Bivour ₂ , Sudipta Seal _{1,

4,

7} , Kristopher O. Davis _{1,

3,

8}

Affiliation

Molybdenum oxide thin films are successfully deposited using spatial atomic layer deposition (SALD), a tool designed for high‐throughput industrial film growth. The structural and optical properties of the film are evaluated using ultraviolet photoelectron spectroscopy, high‐resolution transmission electron microscopy, and spectroscopic ellipsometry. To demonstrate the applicability of molybdenum oxide in industrial settings the films are applied as hole‐selective silicon heterojunction contacts for solar cells. When paired with intrinsic amorphous silicon passivation layers, implied open‐circuit voltages of 699 mV are achieved. The carrier transport is unaffected by low‐temperature contact anneals up to 300 °C with contact resistivities of ≈ 10 mΩ cm². Finally, the optical performance of silicon solar cells featuring different front hole‐selective heterojunction structures are simulated. It is shown that the generation current density of heterojunction solar cells can be significantly increased with the addition of SALD molybdenum oxide contacts.

中文翻译：

工业太阳能电池用氧化钼的空间原子层沉积

使用空间原子层沉积（SALD）成功沉积了氧化钼薄膜，SALD是一种用于高通量工业膜生长的工具。使用紫外光电子能谱，高分辨率透射电子显微镜和椭圆偏振光谱法评估了膜的结构和光学性质。为了证明氧化钼在工业环境中的适用性，该膜被用作太阳能电池的空穴选择性硅异质结触点。与本征非晶硅钝化层配对时，可实现699 mV的隐含开路电压。最高300°C的低温接触退火和≈10mΩcm ^2的接触电阻率不会影响载流子传输。最后，模拟了具有不同前孔选择性异质结结构的硅太阳能电池的光学性能。结果表明，通过添加SALD氧化钼触点，可以显着提高异质结太阳能电池的发电电流密度。

更新日期：2020-11-21

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11