当前位置：
X-MOL 学术
›
Adv. Mater. Interfaces
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Characteristics of Highly Area‐Mismatched Graphene‐to‐Substrate Transfers and the Predictability of Wrinkle Formation in Graphene for Stretchable Electronics
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-10-05 , DOI: 10.1002/admi.202001224 Maddumage Don Sandeepa Lakshad Wimalananda 1 , Jae‐Kwan Kim 1 , Ji‐Myon Lee 1
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-10-05 , DOI: 10.1002/admi.202001224 Maddumage Don Sandeepa Lakshad Wimalananda 1 , Jae‐Kwan Kim 1 , Ji‐Myon Lee 1
Affiliation
|
The indirect‐transfer process is the primary technique used to fabricate graphene electrodes on an arbitrary substrate. The area mismatch between the initial graphene‐Cu substrate and the transfer substrate causes irregularities in the transferred graphene film; wrinkles are one of the primary results. In this paper, it is found that nanoscale surface roughness (wavelength below 500 nm) in the graphene‐Cu 3D substrate (with up to a 4 µm cavity) results in amplified wrinkles (amplitude over 24.4 nm) or newly generated wrinkles (low‐amplitude corrugations) that depend on the corrugation amplitude. Further, a deep‐cavity graphene‐Cu structure (≈20 µm) causes predictable formation of wrinkles in terms of direction and position. The direction of the wrinkle is decided by the true area difference, which creates a strain difference in two perpendicular directions. For unidirectional wrinkles, the position is decided by the strain‐gradient difference. The understanding of highly area‐mismatched transfers facilitates the fabrication of predictable well‐defined wrinkles on an arbitrary substrate. Wrinkled graphene shows better electrical properties (≈1 kΩ between contacts) under strained conditions than regular graphene film.
中文翻译：
可伸缩电子中高度不匹配的石墨烯到衬底的转移特征和石墨烯中皱纹形成的可预测性
间接转移工艺是在任意衬底上制造石墨烯电极的主要技术。初始石墨烯-Cu衬底和转移衬底之间的面积不匹配会导致转移的石墨烯薄膜出现不规则现象；皱纹是主要结果之一。在本文中，发现石墨烯-Cu 3D衬底（腔体最大为4 µm）中的纳米级表面粗糙度（波长低于500 nm）会导致皱纹放大（振幅超过24.4 nm）或新产生的皱纹（低折射率）。幅度波纹）取决于波纹幅度。此外，深腔石墨烯-铜结构（≈20µm）会在方向和位置方面导致可预测的皱纹形成。皱纹的方向取决于实际的面积差异，这会在两个垂直方向上产生应变差。对于单向皱纹，其位置取决于应变梯度差异。对高度不匹配的转印的理解有助于在任意基材上制造可预测的，清晰可辨的皱纹。与常规石墨烯薄膜相比，在应力条件下，起皱的石墨烯显示出更好的电性能（触点之间的≈1kΩ）。
更新日期：2020-11-21
中文翻译：
可伸缩电子中高度不匹配的石墨烯到衬底的转移特征和石墨烯中皱纹形成的可预测性
间接转移工艺是在任意衬底上制造石墨烯电极的主要技术。初始石墨烯-Cu衬底和转移衬底之间的面积不匹配会导致转移的石墨烯薄膜出现不规则现象；皱纹是主要结果之一。在本文中，发现石墨烯-Cu 3D衬底（腔体最大为4 µm）中的纳米级表面粗糙度（波长低于500 nm）会导致皱纹放大（振幅超过24.4 nm）或新产生的皱纹（低折射率）。幅度波纹）取决于波纹幅度。此外，深腔石墨烯-铜结构（≈20µm）会在方向和位置方面导致可预测的皱纹形成。皱纹的方向取决于实际的面积差异，这会在两个垂直方向上产生应变差。对于单向皱纹，其位置取决于应变梯度差异。对高度不匹配的转印的理解有助于在任意基材上制造可预测的，清晰可辨的皱纹。与常规石墨烯薄膜相比，在应力条件下，起皱的石墨烯显示出更好的电性能（触点之间的≈1kΩ）。
京公网安备 11010802027423号