Abstract Electron beam induced deposition using ethylene as precursor gas is used to generate carbonaceous films on Cu(111). The study was performed in an ultrahigh vacuum chamber for two different precursor gas pressures, and two substrate temperatures. Auger electron spectroscopy and reflection electron energy loss spectroscopy were used to characterize the film growth process in-situ. These techniques allowed us to determine how the deposited film covers the Cu(111) substrate as a function of the ethylene exposure, obtaining a final coverage of up to 0.8 monolayer, depending on the growing conditions. Based on the CKLL Auger line shape and on the reflection electron energy loss (REELS) spectra we can conclude on the graphitic characteristics of the grown film and on the optimum growing conditions: lower substrate temperature and higher ethylene pressure. Raman spectroscopy and scanning tunneling spectroscopy were used as ex-situ techniques to assess the properties of the grown film. Results from both techniques indicate that the film consists of small (10–20 nm in size) nanocrystals of few (1–2) layers graphene. Once optimized, this method may allow growing graphene with a predesigned pattern, without the need to heat the substrate at high temperatures.

中文翻译：

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通过电子束诱导沉积在 Cu(111) 上形成石墨膜

摘要 使用乙烯作为前驱气体的电子束诱导沉积用于在 Cu(111) 上生成碳质薄膜。该研究是在超高真空室中针对两种不同的前体气体压力和两种基板温度进行的。俄歇电子能谱和反射电子能量损失能谱用于原位表征薄膜生长过程。这些技术使我们能够确定沉积膜如何覆盖 Cu(111) 基板作为乙烯暴露的函数，根据生长条件获得高达 0.8 单层的最终覆盖率。基于 CKLL 俄歇线形状和反射电子能量损失 (REELS) 光谱，我们可以得出关于生长薄膜的石墨特性和最佳生长条件的结论：较低的基材温度和较高的乙烯压力。拉曼光谱和扫描隧道光谱被用作非原位技术来评估生长膜的特性。两种技术的结果表明，该薄膜由少量 (1-2) 层石墨烯的小（10-20 nm）纳米晶体组成。一旦优化，这种方法可以允许生长具有预先设计的图案的石墨烯，而无需在高温下加热基板。