Doped polymeric hybrid thin films based on Poly-Methyl-Meth-Acrylate (PMMA) and Poly-vinyl-alcohol (PVA) doped with silica nanoparticles (SiO₂ NPs) are synthesized using the dip-coating technique. The as-prepared (PMMA-PVA)/SiO₂ nanocomposite (wt% of SiO₂ NPs = 2%, 4%, 8%, and 16%) are deposited on glass substrates. Transmittance (T%) and reflectance (R%) are measured using a UV–Vis spectrometer. Furthermore, other related optical parameters such as absorption coefficient (α), optical constants (n and k), and optical dielectric functions (ε₁ and ε₂) are calculated using experimental transmittance, reflectance spectra and well-established classical models such as Tauc, Urbach and Spitzer-Fan and Drude models. The Tauc model is used to estimate the optical bandgap energy. Incorporation of specific concentrations of SiO₂ NPs into PMMA-PVA polymeric matrix leads to a noticeable decrease of the optical bandgap. The optical bandgap of un-doped PMMA-PVA thin-film is estimated to be 4.069 eV. Consequently, bandgap engineering and manipulation of optical properties are possible. Additionally, refractive indices (n) of undoped PMMA-PVA polymeric thin films are calculated to be in the range (1.48–1.72). To elucidate and identify vibrational modes of thin films, Fourier-transform infrared spectroscopy (FTIR) is employed in the spectral range (500 cm⁻¹–4000 cm⁻¹). The results obtained are useful for a better understanding of the lattice dynamics. Moreover, thermal stability of thin films is investigated using thermogravimetric (TGA) technique. Remarkably, TGA thermograms reveal that doped thin films are thermally stable below 110C. Consequently, investigated thin films may have the potential to be key candidates for real-time optical and optoelectronic devices.

利用浸涂技术合成了基于聚甲基丙烯酸甲酯（PMMA）和掺杂有二氧化硅纳米颗粒（SiO ₂ NPs）的聚乙烯醇（PVA）的掺杂聚合物杂化薄膜。制备的（PMMA-PVA）/ SiO ₂纳米复合材料（SiO ₂ NPs的wt％= 2％，4％，8％和16％）沉积在玻璃基板上。透射率（T％）和反射率（R％）使用紫外可见光谱仪测量。此外，其它相关的光学参数如吸收系数（α），光学常数（Ñ和ķ）和光学介电函数（ε ₁和ε ₂）是使用实验透射率，反射光谱和完善的经典模型（例如Tauc，Urbach和Spitzer-Fan和Drude模型）计算的。Tauc模型用于估计光带隙能量。将特定浓度的SiO ₂ NPs掺入PMMA-PVA聚合物基质中会导致光学带隙显着降低。未掺杂的PMMA-PVA薄膜的光学带隙估计为4.069 eV。因此，带隙工程和光学性质的操纵是可能的。另外，折射率（n）的未掺杂PMMA-PVA聚合物薄膜的计算值在（1.48–1.72）范围内。为了阐明和识别薄膜的振动模式，在光谱范围（500 cm ^-1 –4000 cm ^-1）内采用了傅里叶变换红外光谱（FTIR ）。获得的结果有助于更好地理解晶格动力学。此外，使用热重（TGA）技术研究了薄膜的热稳定性。值得注意的是，TGA热分析图表明掺杂的薄膜在110°C以下是热稳定的。因此，研究过的薄膜可能有可能成为实时光学和光电设备的关键候选人。