Abstract This review focuses on the use of atomic-resolution structure imaging in the transmission electron microscope (TEM) to determine atomic arrangements at defects and interfaces in compound semiconductor (CS) thin films and heterostructures. The article begins with a brief overview of relevant sample preparation techniques and a short description of suitable TEM operating modes and some practical requirements for atomic-structure imaging. Atomically-resolved structural defects, including different types of dislocations associated with stacking faults and twin boundaries, are then described. Attention is directed towards isovalent and heterovalent heterostructures with several types of interfacial defects. Critical issues associated with assessing interface abruptness and chemical intermixing, which directly impact proposed CS device applications, are also considered. Finally, ongoing challenges and prospects for future atomic-resolution studies of CS materials are briefly discussed.

中文翻译：

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化合物半导体中缺陷和界面的原子分辨率结构成像

摘要 本综述侧重于使用透射电子显微镜 (TEM) 中的原子分辨率结构成像来确定化合物半导体 (CS) 薄膜和异质结构中缺陷和界面处的原子排列。本文首先简要概述了相关的样品制备技术，并简要说明了合适的 TEM 操作模式和原子结构成像的一些实际要求。然后描述了原子分辨的结构缺陷，包括与堆垛层错和孪晶边界相关的不同类型的位错。注意力集中在具有几种类型界面缺陷的等价和异价异质结构上。与评估界面突变和化学混合相关的关键问题，也考虑直接影响提议的 CS 设备应用程序。最后，简要讨论了未来 CS 材料原子分辨率研究的持续挑战和前景。