Abstract This work investigates the physical properties of sol-gel processed ZnO thin films under the influence of heterovalent Sn–In co-doping. Different characterization techniques were used to investigate the structural, optical, photoluminescence, and electrical properties of the films. All the films possess a hexagonal wurtzite structure of zinc oxide with preferred orientation along the (0 0 2) plane. As evident from the morphological images, all the films have a granular morphology with varying characteristics. In comparison to the undoped film, the optical transmittance of the 1TZO, 1T3IZO, and 3T1IZO films improves and is about ~80–85%. The direct energy bandgap of the films decreases upon co-doping due to the creation of energy states localized near the conduction band edge. The refractive index of the films varies between 3.36 and 1.69 in the wavelength range of 315–700 nm. The room temperature PL spectra of the films comprise one band-edge emission peak due to excitonic recombination in the UV region, and a broad emission peak associated with single ionized oxygen vacancies in the visible region. The 1T3IZO film shows the optimum transmittance and lower electrical resistivity.

中文翻译：

---

Sn-In 共掺杂对溶胶-凝胶处理的 ZnO 薄膜的结构、光学、光致发光和电学特性的影响

摘要 这项工作研究了在异价 Sn-In 共掺杂影响下溶胶-凝胶处理的 ZnO 薄膜的物理性质。使用不同的表征技术来研究薄膜的结构、光学、光致发光和电学特性。所有薄膜都具有氧化锌的六方纤锌矿结构，沿（0 0 2）面具有优先取向。从形态学图像中可以明显看出，所有薄膜都具有具有不同特征的颗粒形态。与未掺杂的薄膜相比，1TZO、1T3IZO 和 3T1IZO 薄膜的透光率有所提高，约为 80-85%。由于在导带边缘附近产生局部能态，共掺杂后薄膜的直接能带隙减小。薄膜的折射率在 3.36 和 1 之间变化。69 在 315-700 nm 的波长范围内。薄膜的室温 PL 光谱包括一个由紫外区激子复合引起的带边发射峰，以及一个与可见光区单个电离氧空位相关的宽发射峰。1T3IZO 薄膜显示出最佳的透射率和较低的电阻率。