当前位置：
X-MOL 学术
›
Phys. Status Solidi. Rapid Res. Lett.
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Temperature‐Dependent Electronic Transport in Non‐Bulk‐Resistance‐Variation Nitrogen‐Doped Cr2Ge2Te6 Phase‐Change Material
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-10-02 , DOI: 10.1002/pssr.202000415 Yi Shuang 1 , Shogo Hatayama 1 , Daisuke Ando 1 , Yuji Sutou 1
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-10-02 , DOI: 10.1002/pssr.202000415 Yi Shuang 1 , Shogo Hatayama 1 , Daisuke Ando 1 , Yuji Sutou 1
Affiliation
|
The electronic transport mechanism of the nitrogen‐doped Cr2Ge2Te6 (NCrGT) phase‐change material (PCM) is studied, showing almost zero resistivity variation upon phase transition. A similar low‐temperature variable‐range hopping (VRH) behavior in both the amorphous and crystalline phases of the NCrGT PCM is observed by measuring the temperature‐dependent resistivity. At high temperatures above 300 K, the conduction mechanism in the amorphous NCrGT is thermally activated band conduction, while the carrier transport in the crystalline NCrGT is still driven by VRH. Moreover, Hall property measurements reveal a thermally activated carrier in the amorphous NCrGT and mobility‐driven hopping conduction in the crystalline NCrGT at a high temperature range from 300 to 400 K. The conduction mechanism difference between the amorphous and crystalline NCrGT/tungsten (W) contacts is further investigated by measuring the temperature‐dependent I–V characteristics. The conduction in the amorphous NCrGT/W contact is dominated by thermionic‐field emission, while the transport mechanism through the crystalline NCrGT/W interface is controlled by the defect‐assisted tunneling current. Such noticeable conduction mechanism variation results in a large contact resistance contrast in a memory cell.
中文翻译：
非本体电阻变化的氮掺杂Cr2Ge2Te6相变材料中的温度依赖性电子传输
氮掺杂Cr 2 Ge 2 Te 6的电子输运机理对（NCrGT）相变材料（PCM）进行了研究，结果显示相变时电阻率变化几乎为零。通过测量随温度变化的电阻率，在NCrGT PCM的非晶相和结晶相中都观察到类似的低温变程跳跃（VRH）行为。在高于300 K的高温下，非晶NCrGT中的传导机制是热激活的带导，而晶体NCrGT中的载流子传输仍受VRH驱动。此外，霍尔特性测量显示了在300至400 K的高温范围内，非晶态NCrGT中的热活化载流子和晶体NCrGT中的迁移率驱动的跳跃传导。I – V特性。非晶态NCrGT / W接触中的传导主要由热电子场发射决定，而通过晶体NCrGT / W界面的传输机制由缺陷辅助隧穿电流控制。这种明显的传导机制变化导致存储单元中的大的接触电阻对比。
更新日期：2020-10-02
中文翻译：
非本体电阻变化的氮掺杂Cr2Ge2Te6相变材料中的温度依赖性电子传输
氮掺杂Cr 2 Ge 2 Te 6的电子输运机理对（NCrGT）相变材料（PCM）进行了研究，结果显示相变时电阻率变化几乎为零。通过测量随温度变化的电阻率，在NCrGT PCM的非晶相和结晶相中都观察到类似的低温变程跳跃（VRH）行为。在高于300 K的高温下，非晶NCrGT中的传导机制是热激活的带导，而晶体NCrGT中的载流子传输仍受VRH驱动。此外，霍尔特性测量显示了在300至400 K的高温范围内，非晶态NCrGT中的热活化载流子和晶体NCrGT中的迁移率驱动的跳跃传导。I – V特性。非晶态NCrGT / W接触中的传导主要由热电子场发射决定，而通过晶体NCrGT / W界面的传输机制由缺陷辅助隧穿电流控制。这种明显的传导机制变化导致存储单元中的大的接触电阻对比。
京公网安备 11010802027423号