Abstract Effect of forming gas (mixture gas of 5% hydrogen gas in nitrogen gas) annealing in formation of CuCrO2 thin film via solid phase calcination was investigated. Forming gas annealing contributed to reduce Cu2+ ions in an amorphous CuCrO2 film to Cu+ ions, so both out-of-plane and in-plane crystalline orientations were improved. Supplementation of oxygen vacancies in CuCrO2 formed by reactive sputtering carried in the mixture gas of Ar and O2 enhanced the effect of Cu2+ reduction by forming gas annealing. Forming gas annealing was effective to obtain one-tenth smaller resistivity but was not effective to improve optical transmittance.

中文翻译：

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合成气退火对固相煅烧CuCrO2薄膜晶体取向改善的影响

摘要 研究了合成气体（5%氢气与氮气的混合气体）退火对固相煅烧形成CuCrO2薄膜的影响。成形气体退火有助于将非晶 CuCrO2 膜中的 Cu2+ 离子还原为 Cu+ 离子，因此面外和面内晶体取向均得到改善。在 Ar 和 O2 混合气体中进行反应溅射形成的 CuCrO2 中氧空位的补充增强了通过形成气体退火还原 Cu2+ 的效果。成形气体退火可有效地使电阻率减小十分之一，但不能有效提高光透射率。