Abstract In this work, the high quality of CdO film with a different percentage of Ga doping prepared onto optically flat glass substrates using a sol-gel spin coating progression for enhancement of its structural characteristics for various applications. X-ray diffraction results confirm that the prepared films of CdO are amorphous due to the long-range array of deposited crystals. The images of the atomic force microscopy indicated that the surface morphology of the pure and Ga-doped CdO films has high roughness values of 60–80 nm and average particle size 85–100 nm. The optical constants were calculated using the Kramer-Kronig approach. The calculated optical transmission specifies a high transmission exceeding from 77% to 85% through the non-absorbing region depending on the doping concentrations. The results confirm that the measured optical band gap is strongly influenced by doping concentrations of Ga and decreases from 2.35 to 1.72 eV. The calculated optical dispersion and non-linear optical parameters were found to be strongly affected by doping. The terahertz cut-off frequency was set for the pure and Ga-doped CdO films indicating the applicability of the prepared films as terahertz filters.

中文翻译：

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用于光电二极管应用的纳米结构 Ga 掺杂 @CdO/FTO 薄膜的结构研究和光学增强表征

摘要在这项工作中，使用溶胶-凝胶旋涂工艺在光学平面玻璃基板上制备了具有不同 Ga 掺杂百分比的高质量 CdO 膜，以增强其结构特性以适应各种应用。X 射线衍射结果证实，由于沉积晶体的长程阵列，制备的 CdO 薄膜是非晶态的。原子力显微镜图像表明，纯和 Ga 掺杂的 CdO 薄膜的表面形貌具有 60-80 nm 的高粗糙度值和 85-100 nm 的平均粒径。使用 Kramer-Kronig 方法计算光学常数。根据掺杂浓度，计算出的光透射率指定通过非吸收区的高透射率超过 77% 到 85%。结果证实，测量的光学带隙受 Ga 掺杂浓度的强烈影响，从 2.35 eV 降低到 1.72 eV。发现计算的光学色散和非线性光学参数受掺杂的强烈影响。为纯和 Ga 掺杂的 CdO 薄膜设置了太赫兹截止频率，表明所制备的薄膜作为太赫兹滤波器的适用性。