Semiconductors are considered as promising materials for the fabrication of photo-thermo sensors with high sensitivity. Therefore, here we propose to synthesize of amorphous 2D single-layered structures with high thermo-photosensitivity by using photons generated by a KrF* laser radiation (λ = 248 nm, τFWHM ≤ 25 ns) in the reaction of copper (Cu) atoms with methane (CH4) molecules by reactive pulsed laser deposition (RPLD) process. Optimum conditions were found out to synthesize of these structures with the thickness of (56–160) nm. X-ray diffraction analysis evidenced either amorphous or polycrystalline structures on the deposits. Element analysis was carried out by energy-dispersive X-ray spectroscopy (EDXS). The semiconductor temperature trend was detected with the variable energy band gap (Eg) in the range of (0.17–1.0) eV depending on substrate temperature, CH4 pressure and structures’ thickness. The highest photosensitivity of these structures was high as 640 V/W at white light power density ~ 6 × 10–3 W/cm2 and the highest thermo-sensitivity (Seebeck coefficient) was high as 10.5 mV/K. An interpretation is provided for thermo-photosensitivity behaviour. The amorphous 2D single-layered structures were synthesized by laser radiation for the first time with such superior thermo-photo properties. Therefore, such structures are exceptional candidates for a new generation of effective thermo-photo sensors operating at moderate temperatures.

中文翻译：

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用于高灵敏度光热传感器的二维结构的激光合成

半导体被认为是制造高灵敏度光热传感器的有前途的材料。因此，我们在这里建议通过使用由 KrF* 激光辐射（λ = 248 nm，τFWHM ≤ 25 ns）在铜 (Cu) 原子与反应脉冲激光沉积 (RPLD) 工艺产生的甲烷 (CH4) 分子。找到了合成这些厚度为（56-160）nm的结构的最佳条件。X 射线衍射分析证实了沉积物上的无定形或多晶结构。元素分析通过能量色散X射线光谱法(EDXS)进行。在（0.17-1）范围内检测到可变能带隙（Eg）的半导体温度趋势。0) eV 取决于衬底温度、CH4 压力和结构厚度。这些结构的最高光敏性在白光功率密度 ~ 6 × 10–3 W/cm2 下高达 640 V/W，最高热敏性（塞贝克系数）高达 10.5 mV/K。提供了对热光敏行为的解释。非晶二维单层结构首次通过激光辐射合成，具有如此优异的热光性能。因此，这种结构是在中等温度下工作的新一代有效热光传感器的特殊候选者。这些结构的最高光敏性在白光功率密度 ~ 6 × 10–3 W/cm2 下高达 640 V/W，最高热敏性（塞贝克系数）高达 10.5 mV/K。提供了对热光敏行为的解释。非晶二维单层结构首次通过激光辐射合成，具有如此优异的热光性能。因此，这种结构是在中等温度下工作的新一代有效热光传感器的特殊候选者。这些结构的最高光敏性在白光功率密度 ~ 6 × 10–3 W/cm2 下高达 640 V/W，最高热敏性（塞贝克系数）高达 10.5 mV/K。提供了对热光敏行为的解释。非晶二维单层结构首次通过激光辐射合成，具有如此优异的热光性能。因此，这种结构是在中等温度下工作的新一代有效热光传感器的特殊候选者。