The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and deep multiplication layer. The sensors were exposed to a neutron fluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timing resolution were measured as a function of bias voltage at -30C, furthermore the profile of the capacitance over voltage of the sensors was measured.

中文翻译：

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深增益层和碳注入对 LGAD 辐射硬度的影响

由 Hamamatsu photonics (HPK) 和 Fondazione Bruno Kessler (FBK) 制造的 50 um 厚低增益雪崩二极管 (LGAD) 探测器的性能在用 1 MeV 中子辐照之前和之后进行了测试。在使用来自 90Sr 源的 b 粒子的电荷收集研究和电容电压扫描 (CV) 中测量了它们的性能，以确定耗尽增益层的偏置。FBK 在 UFSD3 生产中对传感器增益层的碳注入进行了测试。相反，HPK 生产具有非常薄、高掺杂和深倍增层的 LGAD。传感器暴露在 4e14 neq/cm2 到 4e15 neq/cm2 的中子注量下。收集的电荷和时间分辨率在 -30C 下作为偏置电压的函数进行测量，此外还测量了传感器的电容随电压的分布。