The growth of two-dimensional layered chalcogenides on two- or three-dimensional substrates, named (quasi) van der Waals epitaxy, has been pioneered by the group of A. Koma at Tokyo University in 1985. The passive nature of the van der Waals surface is important in energy converting interfaces as solar cells and photoelectrochemical cells. For those reasons the two-dimensional materials have intensively been studied by us in the early 90s of the last century. The growth of different 2D/2D, 2D/3D and 3D/2D heterostructures has been studied with an emphasis on the electronic structure of the materials and their interfaces, which have been characterized using photoelectron spectroscopy and are reviewed in this contribution. Our work includes a discussion of the coupling of electronic states across the interfaces, which influences the growth behavior and determines energy band alignment. The weak electronic coupling allowed the first experimental determination of the band structure ...

中文翻译：

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综述—（准）范德华外延生长的二维层状硫族化物表面和界面的电子性质

二维分层硫族化物在二维或三维基体上生长，称为（准）范德华斯外延，是1985年东京大学A. Koma小组率先提出的。范德华斯的被动性质表面在诸如太阳能电池和光电化学电池的能量转换界面中很重要。由于这些原因，我们在上世纪90年代初对二维材料进行了深入研究。已经研究了不同的2D / 2D，2D / 3D和3D / 2D异质结构的生长，重点是材料的电子结构及其界面，这些材料已使用光电子能谱进行了表征，并对此进行了综述。我们的工作包括讨论接口之间电子状态的耦合，它影响生长行为并确定能带排列。弱的电子耦合使能带结构的第一个实验确定...