The tin oxide (SnO₂) thin films have been prepared by the pulsed laser deposition (PLD) at deposition temperatures (T_d) ranging from 300 to 500 °C with different morphologies and studied as anode for sodium-ion battery. The microstructural evolutions of the thin films are investigated by various techniques which reveal a pure SnO₂ phase. The crystallinity of the thin film deposited at 300 °C shows partial amorphous characteristics. Among all the samples, SnO₂ thin film deposited at 300 °C exhibits superior electrochemical performance. The films at 300 °C display a high specific capacity of 488 mAh g⁻¹ (at 20 mA g⁻¹) after 50 cycles and a coulombic efficiency of 96% after 200 cycles at 130 mA g⁻¹ (voltage window of 0.01 V to 2.0 V). The achieved high specific capacity can be credited to sodium (Na) storage mechanisms of SnO₂, which are both (1) conversion of SnO₂ to Sn nanocrystals and followed by (2) alloying of Na and Sn.

氧化锡（SnO ₂）薄膜是通过脉冲激光沉积（PLD）在300到500°C的沉积温度（T _d）下制备的，具有不同的形貌，并被用作钠离子电池的阳极。通过揭示纯SnO ₂相的各种技术研究了薄膜的微观结构演变。在300℃下沉积的薄膜的结晶度显示出部分非晶态特性。在所有样品中，在300°C沉积的SnO ₂薄膜表现出优异的电化学性能。300°C时的薄膜显示出488 mAh g ^-1的高比容量（20 mA g ^-1时））50个循环后，在130 mA g ^-1（0.01 V至2.0 V的电压窗口）下200个循环后的库仑效率为96％。所获得的高比容量可以归因于SnO _2的钠（Na）储存机制，这既是（1）将SnO ₂转化为Sn纳米晶体，又是（2）Na和Sn合金化。