This study presents firstly, experimental results through an innovative reliability bench of pulsed RF life test in a radar application for device lifetime under pulse conditions, then the physical clarifications of the failure phenomenon. The results of accelerated aging stress relative to various temperatures (3000 h at 150 and 10°C) are presented. Based on the radio-frequency (RF) behaviour parameters shifts (gain, P _out , drain efficiency: DE, and P _sat ), the reliability of different tests have been compared. To explain and confirm these effects according to the degradation data, the dominant physical phonemes involved have been studied and the failure modes of the metal-oxide-semiconductor field-effect transistors have been examined and proved with the SILVACO-ATLAS simulator. What supports finding a relationship between the shifts of RF electrical parameters to failure physical phenomena caused by impact ionisation. The behaviour degradation of N-LDMOS is related to interface states generated by hot carriers (traps) and by the electrons that are trapped, which leads to an accumulation of negative charge at the Si/SiO ₂ interface. At low temperature, the interface states are created more, due to a maximum impact ionisation rate targeted in the gate edge area. Finally, RF behaviour reliability analysis has been discussed.

中文翻译：

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雷达应用S波段脉冲N-LDMOS脉冲寿命试验中功率N-LDMOS的RF性能可靠性

这项研究首先通过创新的脉冲射频寿命测试可靠性试验台展示了实验结果，该测试在雷达应用中用于脉冲条件下的设备寿命，然后对故障现象进行了物理澄清。给出了相对于各种温度（在150和10°C下3000 h）加速老化应力的结果。根据射频（RF）行为参数的变化（增益，P _出 ，漏极效率：DE，和P _饱和 ），不同的测试的可靠性进行了比较。为了根据降级数据解释和确认这些影响，已研究了涉及的主要物理音素，并使用SILVACO-ATLAS模拟器对金属氧化物半导体场效应晶体管的故障模式进行了检查和验证。支持查找射频电参数的变化与由碰撞电离引起的故障物理现象之间的关系的因素。N-LDMOS的行为退化与热载流子（陷阱）和被俘获的电子产生的界面状态有关，这导致在Si / SiO ₂处积累负电荷 接口。在低温下，由于以栅极边缘区域为目标的最大碰撞电离速率，会产生更多的界面状态。最后，讨论了射频行为可靠性分析。