In this study, we investigated the morphological, structural, and electrical properties of carbon nanowall (CNW) structures obtained by plasma-enhanced chemical vapour deposition (PECVD) and underlined the induced effects of argon/nitrogen (Ar/N₂) postsynthesis plasma treatment on the electrical behaviour. The top view and cross-section scanning electron microscopy micrographs revealed that the fabricated samples are about 18 μm height, and the edges are less than 10 nm. The Raman analysis showed the presence of the specific peaks of graphene-based materials, i.e., D-band, G-band, D-band, 2D-band, and D+G-band. The average values of the electrical resistance of fabricated samples were evaluated by current-voltage characteristics acquired at room temperature, in the ranges of 0 V–0.2 V, and an increase was noticed with about 50% after the Ar/N₂ postsynthesis plasma treatment compared to pristine samples. Moreover, the Hall measurements proved that the obtained CNW structures had p-type conductivity (Hall coefficient was 0.206 m³/C), and the concentration of charge carriers was  cm^-3, at room temperature.

中文翻译：

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通过等离子体增强化学气相沉积获得的碳纳米壁的结构，形态和电学性质

在这项研究中，我们研究了通过等离子体增强化学气相沉积（PECVD）获得的碳纳米壁（CNW）结构的形态，结构和电学性质，并强调了氩气/氮气（Ar / N ₂）后合成等离子体处理的诱导效应。在电气性能上。的顶视图和横截面扫描电子显微镜的显微照片表明，所制造的样品是约18  μ米的高度，并且边缘小于10nm。拉曼分析表明基于石墨烯的材料，即，d带，G带，d的特定峰的存在-频段，2D频段和D + G频段。通过室温下获得的电流-电压特性（在0 V–0.2 V范围内）评估制成的样品的电阻平均值，并且在Ar / N _2后合成等离子体处理后发现约50％的升高与原始样品相比。此外，霍尔测量证明所获得的CNW结构具有p型电导率（霍尔系数为0.206 m ³ / C），载流子浓度为 cm ^-3，在室温下。