The effect of thermal annealing on spin accumulation signals in silicon (Si)-based lateral spin devices is investigated. The annealing is carried out after fabrication of the spin devices, which allows us to directly compare the spin-related phenomena before and after annealing. The magnitude of non-local four-terminal signals (ΔV_nl) at room temperature is increased more than two-fold after annealing at 300 °C for 1 h. The channel length dependence of ΔV_nl and the Hanle signals reveal that the spin polarization of the ferromagnetic contact is increased by the annealing. In contrast, the spin diffusion length and spin lifetime in the Si channel do not change.

中文翻译：

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通过硅基侧向自旋阀中的热退火增强自旋信号

研究了热退火对基于硅（Si）的横向自旋器件中自旋累积信号的影响。退火是在制造自旋器件之后进行的，这使我们可以直接比较退火前后的自旋相关现象。非本地四端信号（的大小ΔV _NL在300℃下退火1个小时之后），在室温下超过增加两倍。的沟道长度依赖性ΔV _NL和汉勒信号表明，该铁磁接触的自旋极化增加退火。相反，Si沟道中的自旋扩散长度和自旋寿命不变。