Interlayer Exciton–Polaron in Atomically Thin Semiconductors,Annalen Der Physik

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Interlayer Exciton–Polaron in Atomically Thin Semiconductors
Annalen Der Physik ( IF 2.2 ) Pub Date : 2020-10-01 , DOI: 10.1002/andp.202000339
Marina A. Semina ₁ , Mikhail M. Glazov ₁ , Eugene Sherman _{2,

3}

Affiliation

A novel type of exciton–phonon bound state—interlayer polaron—in a double‐layer 2D semiconductor with transition metal dichalcogenides as an example, is predicted. In these systems, the interaction of the interlayer exciton with the soft modes of out‐of‐plane lattice vibrations caused by van der Waals forces and flexural rigidity gives rise to a bound quasiparticle. The energy and effective mass of the formed polaron for weak and strong exciton–phonon coupling regimes are calculated and analyzed. Possible manifestations of these effects in transport‐ and spectroscopy‐related experiments are discussed.

中文翻译：

原子薄半导体中的层间激子–极化子

预测了一种以过渡金属二卤化物为例的双层二维半导体中的新型激子-声子结合态-层间极化子。在这些系统中，层间激子与范德华力和挠曲刚度引起的面外晶格振动的软模式的相互作用产生了结合的准粒子。计算并分析了弱和强激子-声子耦合形式的极化子的能量和有效质量。讨论了在与运输和光谱学相关的实验中这些效应的可能表现。

更新日期：2020-10-01

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