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The characterization and properties of mixed Sc2O3/SiO2 films
Thin Solid Films ( IF 2.1 ) Pub Date : 2020-11-01 , DOI: 10.1016/j.tsf.2020.138357
Pengfei Kong , Yunti Pu , Ping Ma , Jiliang Zhu

Abstract Scandium oxide (Sc2O3)/silicon oxide (SiO2) mixture films with different volume fractions were prepared by ion beam sputtering. The refractive indexes and the transmittance indexes of Sc2O3/SiO2 mixture films were measured. It was found that refractive indexes and transmittance indexes were changed by varying the volume fractions of Sc2O3 in mixture films. In addition, the relationship between the residual stress in Sc2O3/SiO2 mixture films and the volume fractions of Sc2O3 was studied. In this experiment, the residual stress increased with the increase of the volume fractions of Sc2O3, which was due to the changes of the concentrations of interstitial oxygen and oxygen vacancy in mixture films. The concentrations of interstitial oxygen and oxygen vacancy were limited by the formation energy under different conditions, which was consistent with the result of positron annihilation. Finally, the relationship between the laser-induced damage threshold (LIDT) of thin films and the content of Sc2O3 was investigated and the laser-induced damage morphologies of thin films were observed.

中文翻译:

混合Sc2O3/SiO2薄膜的表征和性能

摘要 采用离子束溅射制备了不同体积分数的氧化钪(Sc2O3)/氧化硅(SiO2)混合薄膜。测量了 Sc2O3/SiO2 混合膜的折射率和透射率。发现通过改变混合膜中 Sc2O3 的体积分数来改变折射率和透射率。此外,还研究了 Sc2O3/SiO2 混合物薄膜中的残余应力与 Sc2O3 的体积分数之间的关系。在本实验中,残余应力随着 Sc2O3 体积分数的增加而增加,这是由于混合膜中间隙氧和氧空位浓度的变化。间隙氧和氧空位的浓度受不同条件下形成能的限制,这与正电子湮灭的结果一致。最后,研究了薄膜的激光损伤阈值(LIDT)与Sc2O3含量之间的关系,观察了薄膜的激光损伤形貌。
更新日期:2020-11-01
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