Abstract In this paper, we have developed a new 2D compact analytical model for surface potential and drain current for III-V group heterojunction of T-shaped Vertical Tunneling FET with inherited properties of dual modulation effect. The device's surface potential is determined from the compact model, which is the most significant consideration for defining device current characteristics. There have been numerous efforts to predict the electrical characteristics of In0.53Ga0.47As as a heterojunction and to discuss the method of device improvement as a function of mole-fraction, gate-drain biasing potential, gate metal work-function. To determine the tunneling width, the dual modulation effect is used to regulate the biasing voltage at both the source and drain junction. A 2-D Poisson equation is solved for the proposed model by using parabolic approximation method with constant electric field which are used to determine the effect of In0.53Ga0.47As as a comparison to Silicon and SiGe material device. Moreover, a new expression of channel surface potential is derived that can forecast the effect of drain and gate biasing. The derived model results validation is carried out by the comparison with the results obtained by TCAD simulation.

中文翻译：

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T形III-V族异质结垂直T-FET的解析建模与仿真分析

摘要 在本文中，我们开发了一种新的二维紧凑型分析模型，用于 T 形垂直隧道 FET 的 III-V 族异质结的表面电位和漏极电流，具有双重调制效应的继承特性。器件的表面电位由紧凑模型确定，这是定义器件电流特性的最重要考虑因素。已经做了很多努力来预测作为异质结的 In0.53Ga0.47As 的电特性，并讨论作为摩尔分数、栅漏偏置电位、栅金属功函数的函数的器件改进方法。为了确定隧道宽度，使用双调制效应来调节源极和漏极结处的偏置电压。通过使用具有恒定电场的抛物线近似方法求解所提出的模型的二维泊松方程，该方法用于确定 In0.53Ga0.47As 与硅和 SiGe 材料器件的比较效果。此外，推导出了一种新的沟道表面电位表达式，可以预测漏极和栅极偏置的影响。导出的模型结果验证是通过与 TCAD 模拟获得的结果进行比较来进行的。