Polycrystalline Yb-substituted Ni-Zn nanoferrites with the compositions of Ni_0.5Zn_0.5Yb_xFe_2-xO₄ (x = 0.00, 0.04, 0.08, 0.12, 0.16 and 0.20) have been synthesized using sol–gel auto combustion technique. Single phase cubic spinel structure has been confirmed by the X-ray diffraction (XRD) patterns. Larger lattice constants of the compositions are found with increasing Yb³⁺ concentration while the average grain size (52–18 nm) has noticeable decrease as Yb³⁺ content is increased. The presence of all existing elements as well as the purity of the samples has also been confirmed from energy dispersive X-ray spectroscopic (EDS) analysis. Frequency dependent dielectric constant, dielectric loss, dielectric relaxation time, AC and DC resistivity of the compositions have also been examined at room temperature. The DC resistivity value is found in the order of 10¹⁰ Ω-cm which is at least four orders greater than the ferrites prepared by conventional method. This larger value of resistivity attributes due to very small grain size and successfully explained using the Verwey and deBoer hopping conduction model. The contribution of grain and grain boundary resistance has been elucidated using Nyquist/Cole-Cole plot. The study of temperature dependent DC resistivity confirms the semiconducting nature of all titled compositions wherein bandgap (optical) increases from 2.73 eV to 3.25 eV with the increase of Yb content. The high value of resistivity is of notable achievement for the compositions that make them a potential candidate for implication in the high frequency applications where reduction of eddy current loss is highly required.

 使用溶胶-凝胶自动燃烧技术合成了具有Ni _0.5 Zn _0.5 Yb _x Fe _2-x O ₄（x = 0.00、0.04、0.08、0.12、0.16和0.20）组成的多晶Yb取代Ni-Zn纳米铁氧体。单相立方尖晶石结构已通过X射线衍射（XRD）模式得到证实。该组合物的较大的晶格常数随着镱发现³⁺浓度，同时平均晶粒尺寸（52-18纳米）具有明显减少诸如Yb ³⁺内容增加。能量色散X射线光谱（EDS）分析也证实了所有现有元素的存在以及样品的纯度。还已经在室温下检查了组合物的频率依赖性介电常数，介电损耗，介电弛豫时间，AC和DC电阻率。直流电阻率值约为10 ¹⁰Ω-cm，至少比通过常规方法制备的铁氧体大四个数量级。电阻率的这个较大值归因于非常小的晶粒尺寸，并已使用Verwey和deBoer跳频传导模型成功解释。使用Nyquist / Cole-Cole图可以阐明晶粒和晶界电阻的作用。对温度相关的直流电阻率的研究证实了所有标题化合物的半导体性质，其中带隙（光学）随着Yb含量的增加从2.73 eV增加到3.25 eV。高电阻率的组合物取得了显著成就，这些组合物使其成为潜在需要候选者的高频应用，在这些应用中，要求降低涡流损耗。