Abstract Femtosecond laser hyperdoped silicon, known commonly as black silicon (b-Si), has attracted substantial interest from various fields due to its high absorptance and responsivity ranging from visible to near-infrared wavelengths. However, due to the non-uniformity of b-Si layer and the lattice defects present in it, the processing technique used presently introduces high noise in devices manufactured using b-Si. In this study, a lateral heterojunction is designed and manufactured at the b-Si and silicon interface to restrain the leakage current. Precisely, the lateral structure could support the b-Si photodetector in suppressing the dark current to 783 nA at a bias of -5 V, quite low in terms of orders of magnitude compared to that for the vertical ones. Simultaneously, the photo-to-dark current ratio of 155 is obtained at the same bias voltage with a pertinent external quantum efficiency (EQE) of 371%. Riding on the advantages of low noise, high signal-to-noise ratio, and high sensitivity, this work shows promising prospects for the application of b-Si-based photodetectors toward large-scale integration in optical-electronics or flip-chip interconnection systems.

中文翻译：

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横向异质结对黑硅光电探测器的暗电流抑制

摘要 飞秒激光超掺杂硅，通常被称为黑硅 (b-Si)，由于其高吸收率和从可见光到近红外波长的响应率引起了各个领域的极大兴趣。然而，由于 b-Si 层的不均匀性和其中存在的晶格缺陷，目前使用的加工技术会在使用 b-Si 制造的器件中引入高噪声。在这项研究中，在 b-Si 和硅界面设计和制造横向异质结以抑制漏电流。准确地说，横向结构可以支持 b-Si 光电探测器在 -5 V 的偏压下将暗电流抑制到 783 nA，与垂直结构相比，在数量级上相当低。同时地，在相同的偏置电压下获得 155 的光暗电流比，相关外量子效率 (EQE) 为 371%。凭借低噪声、高信噪比和高灵敏度的优势，这项工作显示了基于 b-Si 的光电探测器在光电子或倒装芯片互连系统中大规模集成的应用前景。 .