Herein, we have developed the thin Gd@PbI₂ films on FTO via a facile spin coating route and subjected to various studies. The formation of (001) oriented hexagonal phase Gd:PbI₂/FTO films was confirmed by X-ray diffraction & FT-Raman spectroscopy analyses. The size was determined through Scherrer formula in 11–16 nm range. The doping of Gd and its homogeneity was tested and approved by EDX and SEM e-mapping studies. The Gd doping impact on surface morphology was inspected via SEM images and found very low dimension grains formation throughout the films area. Tauc’s formula was employed to obtain energy gap and found in 2.46–2.74 eV for all Gd@PbI₂ films. Absorption and refractive indices were estimated in 0.034–1.2 and 1.4–11 between 395 and 2400 nm wavelength regions. Respective dielectric constant and loss values were noted between 3.5 and 112, and 0.13 and 1.4, signify high dielectric constant and low loss values. The optical conductivity was calculated of 10¹⁶ order for all Gd@PbI₂ films. SELF and VELF related values were also determined. The values of nonlinear optics related parameters were also calculated and revealed that the grown films are potential candidates for opto-nonlinear devices.

在这里，我们已经通过一种简便的旋涂工艺在FTO上开发了Gd @ PbI ₂薄膜，并进行了各种研究。通过X射线衍射和FT-拉曼光谱分析证实了（001）取向六方相Gd：PbI ₂ / FTO膜的形成。通过Scherrer公式确定尺寸在11–16 nm范围内。通过EDX和SEM电子映射研究测试并批准了Gd的掺杂及其同质性。通过SEM图像检查了Gd掺杂对表面形态的影响，发现在整个膜区域中形成了非常低尺寸的晶粒。Tauc公式用于获得能隙，并且对于所有Gd @ PbI ₂都在2.46–2.74 eV中发现电影。395和2400 nm波长区域之间的吸收和折射率估计为0.034–1.2和1.4–11。注意到介电常数和损耗值分别在3.5和112之间以及0.13和1.4之间，表示高介电常数和低损耗值。对于所有的Gd @ PbI ₂膜，计算出的光导率为10 ¹⁶阶。还确定了SELF和VELF相关值。还计算了非线性光学相关参数的值，结果表明，生长的薄膜是光非线性器件的潜在候选者。