This study presents the effect of low energy (120 KeV) O-ions implantation on the photosensitivity of PbS thin films by vacuum thermal evaporator (VTE). The crystallite size (D) of PbS films decreased from 32.8 nm to 17.4 nm and the bandgap (E _g) increased from 1.61 eV to 1.76 eV as the fluence increased from 0.5נ10¹⁶ ions cm⁻² to 1.5נ10¹⁶ ions cm⁻². The PL spectra of O-ions implanted PbS thin films showed a dominant peak at 381 nm regardless the fluence of implantation. The photocurrent sharply increased by the implantation of O-ions (0.5נ10¹⁶ ions cm⁻²) due to the creation of ‘shallow traps’ in the forbidden gap of PbS thin films under illumination of visible light (100 mW cm⁻²). The highest photosensitivity of O-ions implanted PbS thin films was observed due to the creation of proper traps for the photoconduction for the particular dose of 0.5נ10¹⁶ ions cm⁻².

本研究通过真空热蒸发器 (VTE) 展示了低能量 (120 KeV) O 离子注入对 PbS 薄膜光敏性的影响。随着注量从0.5נ10 ¹⁶ ions cm ^-2增加到1.5נ10 ¹⁶ ions cm ^-2，PbS薄膜的微晶尺寸（D）从32.8 nm减小到17.4 nm，带隙（E _g）从1.61 eV增加到1.76 eV . 无论注入的通量如何，O 离子注入的 PbS 薄膜的 PL 光谱都在 381 nm 处显示出主峰。注入O离子(0.5נ10 ¹⁶离子cm ^-2) 由于在可见光 (100 mW cm ^-2 ) 的照射下在 PbS 薄膜的禁隙中产生了“浅陷阱” 。由于为特定剂量的 0.5 נ10 ¹⁶离子 cm ^-2的光传导创建了适当的陷阱，观察到 O 离子注入的 PbS 薄膜的最高光敏性。