An optically pumped semiconductor disk laser based on a heterostructure containing ten CdS/ZnSe coupled quantum wells with type-II band offsets is studied. The structure was grown by metalorganic vapour phase epitaxy (MOVPE) on a GaAs substrate. The peak power of the semiconductor disk laser achieved at room temperature under longitudinal pumping by a repetitively pulsed N2 laser was 0.75 W at a wavelength of 496.5 nm, a pulse duration of 3 ns, and a pulse repetition rate of 100 Hz. The slope efficiency of the disk laser was 2.7%. The total divergence angle at a cavity length of 1.1 mm varied from 5 mrad near the lasing threshold to 15 mrad at the maximum pump power.

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496.5 纳米纳秒半导体盘式激光器

研究了基于异质结构的光泵浦半导体盘式激光器，该异质结构包含 10 个具有 II 型带偏移的 CdS/ZnSe 耦合量子阱。该结构是通过金属有机气相外延 (MOVPE) 在 GaAs 衬底上生长的。在室温下通过重复脉冲 N2 激光器在纵向泵浦下获得的半导体盘式激光器的峰值功率为 0.75 W，波长为 496.5 nm，脉冲持续时间为 3 ns，脉冲重复率为 100 Hz。盘式激光器的斜率效率为 2.7%。腔长为 1.1 mm 时的总发散角从激光阈值附近的 5 mrad 变化到最大泵浦功率下的 15 mrad。