A sensor chip for a capacitively coupled pixel detector (CCPD53) has been designed and produced in a 180 nm high voltage CMOS (HVCMOS) technology on a high resistivity wafer with deep p-well option. Capacitively coupled pixel detectors are a simple and low-cost alternative to classical hybrid detectors. They rely on capacitive signal transmission between the sensor chip and the readout chip. A pixel detector with small pixel size can be made without small pitch bumps. The CCPD53 sensor chip contains a pixel matrix of 64 × 40 pixels, each 25 μm × 50 μm in size. The digital output signals of a group of 16 pixels are encoded and the 8-bit output is connected to signal transmission pads arranged with pitch of 50 μm. The pad geometry has been chosen in a way to fit the geometry of the pixel readout ASIC developed by RD53 collaboration at CERN. The PHOTON readout chip has been implemented in the UMC 180 nm CMOS technology. It allows counting and integration of charge signals. The chip ...

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使用PHOTON读出芯片的电容耦合颗粒检测器的测量结果

用于电容耦合像素检测器（CCPD53）的传感器芯片已通过180 nm高压CMOS（HVCMOS）技术设计和生产，并具有深p阱选项，可用于高电阻率晶圆。电容耦合像素检测器是传统混合检测器的一种简单且低成本的替代方案。它们依赖于传感器芯片和读出芯片之间的电容性信号传输。可以制造具有小的像素尺寸的像素检测器而没有小的间距凸起。CCPD53传感器芯片包含一个64×40像素的像素矩阵，每个像素矩阵的尺寸为25μm×50μm。对一组16个像素的数字输出信号进行编码，并将8位输出连接到间距为50μm的信号传输焊盘。焊盘的几何形状已选择为适合CERN RD53合作开发的像素读出ASIC的几何形状。PHOTON读出芯片已在UMC 180 nm CMOS技术中实现。它允许对电荷信号进行计数和积分。芯片...