This paper reports a hybrid silicon nitride–lithium niobate electro-optic Mach–Zehnder-interferometer modulator that demonstrates overall improvements in terms of half-wave voltage, optical insertion loss, extinction ratio, and operational bandwidth. The fabricated device exhibits a DC half-wave voltage of ∼1.3 V, a static extinction ratio of ∼27 dB, an on-chip optical loss of ∼1.53 dB, and a 3 dB electro-optic bandwidth of 29 GHz. In addition, this device operates beyond the 3 dB bandwidth, where a half-wave voltage of 3 V is extracted at 40 GHz when the device is biased at quadrature. The modulator is realized by strip-loading thin-film lithium niobate with low-pressure chemical vapor deposited silicon nitride; this enables reduced on-chip losses and allows for a lengthened 2.4 cm long interaction region that is specifically engineered for broadband performance.

中文翻译：

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用于K波段操作的高效铌酸锂调制器

本文报道了一种混合型氮化硅-铌酸锂电光马赫-曾德尔干涉仪调制器，该调制器在半波电压，光学插入损耗，消光比和工作带宽方面显示出整体改进。制成的器件具有约1.3 V的DC半波电压，约27 dB的静态消光比，约1.53 dB的片上光学损耗以及29 GHz的3 dB电光带宽。此外，该器件的工作频率超过3 dB带宽，当器件以正交偏置时，在40 GHz时会提取3 V的半波电压。该调制器是通过将薄膜铌酸锂与低压化学气相沉积的氮化硅剥离装载而实现的；这样可以减少片上损耗，并允许加长2。