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Resonant exciton excitation photoluminescence and dynamics in a GaAs/AlAs multiple quantum well with internal electric field
Aip Advances ( IF 1.4 ) Pub Date : 2020-09-14 , DOI: 10.1063/5.0020177
Osamu Kojima 1 , Takashi Kita 1 , Matthew J. Steer 2 , Richard A. Hogg 2
Affiliation  

The stability of excitons with large oscillator strengths at room temperature has been of great significance in device applications. In this paper, we report the effects of the ultrafast dissociation of excitons confined in a quantum well on optical characteristics. The photoluminescence spectra show components of higher energy than the excitation energy and a nonlinear increment of the intensity. Furthermore, the spectrally resolved pump–probe signals at the exciton energies elucidate the change in the exciton position. These results indicate the importance of the exciton stability in optical devices, in particular emission type, including terahertz wave, based on excitons.

中文翻译:

带有内部电场的GaAs / AlAs多量子阱中的共振激子激发光致发光和动力学

在室温下,具有大振荡器强度的激子的稳定性在器件应用中具有重要意义。在本文中,我们报告了限制在量子阱中的激子的超快解离对光学特性的影响。光致发光光谱显示出比激发能更高的能量和强度的非线性增量。此外,激子能量处的光谱分辨泵浦-探针信号阐明了激子位置的变化。这些结果表明,基于激子,激子稳定性在光学器件中的重要性,特别是在包括太赫兹波在内的发射类型中。
更新日期:2020-09-30
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