In this study, we investigate a maskless fine etching technology using a He/O₂ atmospheric pressure plasma jet (APPJ) assisted by a scanning probe microscope (SPM). The APPJ is localized in the submicrometer range by a nanopipette, which is also used as the probe of the SPM. We improve the rate of submicrometer-scale etching by adding O₂ gas to the He source gas. The depth and full width at half maximum of a typical etched dot on a polymethylmethacrylate film were 475 nm and 235 nm, respectively. The etching rate was found to be six times faster with the added gas than without it. We also demonstrate line patterning; the width of the line was found to be 281 nm.

中文翻译：

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用扫描探针显微镜对大气He / O2等离子体喷射精细蚀刻

在这项研究中，我们研究了使用He / O ₂大气压等离子体射流（APPJ）和扫描探针显微镜（SPM）辅助的无掩模精细蚀刻技术。通过纳米吸管将APPJ定位在亚微米范围内，该吸管也用作SPM的探针。我们通过向He源气体中添加O ₂气体来提高亚微米级蚀刻速率。聚甲基丙烯酸甲酯膜上典型蚀刻点的深度和半峰全宽分别为475 nm和235 nm。发现添加气体的腐蚀速率比没有添加气体的腐蚀速率快六倍。我们还将展示线条图案；发现线的宽度为281nm。