Junctionless transistors (JLTs) are an attractive candidate for advanced complementary metal oxide semiconductor technologies, but their mode of operation is very different from that of conventional inversion-mode transistors. In this study, we explore the close relationship between the key electrical parameters of JLTs, such as doping concentration (N_d), threshold voltage (V_th), and flat-band voltage (V_fb). The separation between V_fb and V_th in JLTs increases linearly with N_d, and the rate of increase in the separation was affected by the maximum depletion depth (D_max) at given N_d. These findings will enable researchers to estimate simply the N_d or V_fb values of not only JLTs but also JLT-like multi-layer transition metal dichalcogenide-based transistors.

中文翻译：

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简单估算无结型晶体管中的固有电参数

无结晶体管（JLT）是先进的互补金属氧化物半导体技术的有吸引力的候选者，但是它们的工作模式与传统的反转模式晶体管非常不同。在这项研究中，我们探索了JLT的关键电参数之间的密切关系，例如掺杂浓度（N _d），阈值电压（V _th）和平带电压（V _fb）。JLT中V _fb和V _th之间的间隔随N _d线性增加，并且在给定N _d时，最大消耗深度（D _max）影响间隔的增加速率。这些发现将使研究人员不仅可以估算JLT的N _d或V _fb值，还可以估算基于JLT的多层过渡金属二卤化硅基晶体管的N _d或V _fb值。