In this work, short-channel semitransparent indium-tin-oxide (ITO)/Au electrode pairs were fabricated via inkjet printing and lift-off technology. The printed hydrophobic coffee stripes not only define the channel length of ITO/Au electrode pairs, but also help the realization of uniform short-channel In_0.95Ga_0.05O_x thin-film transistors (TFTs). The patterned semitransparent ITO/Au films, with the assistance of inkjet printing, exhibit an excellent conductivity compared to that of printed ITO films, and the short-channel In_0.95Ga_0.05O_x TFTs based on the semitransparent ITO/Au source/drain electrodes exhibit a maximum mobility of 2.9 cm² V⁻¹ s⁻¹. This work proposes a method to prepare patterned high-conductive electrodes for TFTs with the assistance of inkjet printing.

中文翻译：

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基于半透明ITO / Au源/漏电极的全喷墨印刷短通道金属氧化物薄膜晶体管

在这项工作中，通过喷墨印刷和剥离技术制造了短通道半透明氧化铟锡（ITO）/ Au电极对。印刷的疏水咖啡条纹不仅定义了ITO / Au电极对的沟道长度，而且还有助于实现均匀的短沟道In _0.95 Ga _0.05 O _x薄膜晶体管（TFT）。图案化的半透明ITO / Au膜在喷墨印刷的帮助下，与印刷的ITO膜相比具有优异的导电性，并且基于半透明ITO / Au的源/漏电极的短沟道In _0.95 Ga _0.05 O _x TFT表现出2.9 cm ² V ^-1的最大迁移率s ^-1。这项工作提出了一种在喷墨印刷的帮助下制备用于TFT的图案化高导电极的方法。