Abstract A self-normalized photocarrier radiometry (PCR) is proposed to characterize the electronic transport properties (minority carrier lifetime, carrier diffusion coefficient, and surface recombination velocity) of B+ ion-implanted silicon wafers via multi-parameter estimation. In self-normalized PCR the amplitude and phase measured from the implanted surface are normalized by that measured from the matte rear surface (non-implanted substrate) of the ion-implanted silicon wafer to eliminate the need to measure the instrumental frequency response which is a major error source of the multi-parameter estimation. Two- and single-layer nonlinear PCR models are employed respectively to describe the PCR signals measured from the implanted and matte rear surfaces of the wafers. The self-normalized PCR is applied to the simultaneous determination of the electronic transport parameters and the thickness of the implanted layer of the ion-implanted silicon wafers. Experimentally, the frequency dependences of PCR amplitude and phase measured from the implanted and rear surfaces under 830-nm excitation at 40.5 mW are measured for seven B+ ion-implanted silicon wafers with different implantation doses. The electronic transport parameters and thicknesses of the implanted layers are then determined by multi-parameter fitting the self-normalized PCR amplitude and phase to corresponding nonlinear PCR models, as well as determined by the conventional PCR via measuring the instrumental frequency response and subtracting its influence on the measured PCR signals of the ion-implanted wafers for comparison. The lower variances of multi-parameter fitting and improved uncertainties of the fitted transport parameters in the self-normalized PCR as compared to that in the conventional PCR corroborate the improved accuracy and reliability of the self-normalized PCR for the simultaneous determination of the electronic transport parameters of ion-implanted silicon wafers.

中文翻译：

---

使用自归一化非线性光载流子辐射测量法对 B+ 离子注入硅晶片进行准确的电子输运表征

摘要 提出了一种自归一化光载流子辐射测定法 (PCR)，通过多参数估计来表征 B+ 离子注入硅晶片的电子输运特性（少数载流子寿命、载流子扩散系数和表面复合速度）。在自归一化 PCR 中，从注入表面测量的振幅和相位通过从离子注入硅晶片的无光泽背面（非注入衬底）测量的振幅和相位进行标准化，以消除测量仪器频率响应的需要，这是一个多参数估计的主要误差源。分别采用两层和单层非线性 PCR 模型来描述从晶片的注入和无光泽背面测量的 PCR 信号。自归一化 PCR 应用于同时测定离子注入硅片的电子传输参数和注入层厚度。在实验上，对于具有不同注入剂量的七个 B+ 离子注入硅晶片，在 40.5 mW 的 830 nm 激发下测量了从注入和后表面测量的 PCR 幅度和相位的频率依赖性。然后通过将自归一化的 PCR 幅度和相位与相应的非线性 PCR 模型进行多参数拟合，以及通过测量仪器频率响应并减去其影响由常规 PCR 确定注入层的电子传输参数和厚度在离子注入晶片的测量 PCR 信号上进行比较。