Abstract A mathematical model of Green–Naghdi photothermal theory is given to study the wave propagation in a two-dimensional semiconducting material due to moving heat source. By using the Fourier and Laplace transformations with the eigenvalues method, the physical quantities are obtained analytically. Initially, it is assumed that the medium is at rest and it is subject to a heat source in motion with a constant velocity, which is free of traction. A semiconductor media such as silicon has been studied. The derived method is evaluated with numerical results which are applied to the semiconductor medium in simplified geometry. The influences of the different values of moving heat source speed are discussed for all physical quantities.

中文翻译：

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由于移动热源在半导体介质中的光热弹性响应分析

摘要 给出了Green-Naghdi光热理论的数学模型来研究热源移动引起的二维半导体材料中的波传播。通过使用带有特征值方法的傅立叶和拉普拉斯变换，可以解析地获得物理量。最初，假设介质处于静止状态，并且它受到热源的作用，该热源以恒定速度运动，没有牵引力。已经研究了诸如硅的半导体介质。导出的方法用数值结果进行评估，数值结果应用于简化几何中的半导体介质。针对所有物理量讨论了不同的移动热源速度值的影响。