A formula has been obtained for a single-particle current in “dirty” (low concentrations of identical nonmagnetic impurities in the I layer) SIN junctions (S is a superconductor, I is an insulator, N is a normal metal) at low temperatures 0 ≤ T ≪ Δ₀ and voltages 0 ≤ |eV| < Δ₀, where Δ₀ is the superconducting gap in the S shore at T = 0, V is the voltage across the junction, and e is the elementary charge. It has been shown that the presence of random narrowband quantum jumpers in the dirty SIN junction results in a significant lowering of single-particle current-voltage characteristics of the SIN junction compared to single-particle current-voltage characteristics calculated for the same junction within the existing theory. This behavior can be used as an experimental criterion of the presence of such jumpers in the junction. Numerical estimates indicating the possibility of the experimental manifestation of this effect have been presented. The scheme of the experiment for the detection of this effect has been proposed.

已针对低温下“脏”（I层中低浓度的相同非磁性杂质浓度）SIN结（S是超导体，I是绝缘体，N是普通金属）的单粒子电流获得了一个公式0 ≤ Ť «Δ ₀和电压0≤|ë V | <Δ ₀，其中Δ ₀是在S岸超导能隙Ť = 0，V是跨过该结上的电压，和È是基本费用。结果表明，与为SIN结内相同结计算的单粒子电流-电压特性相比，在肮脏的SIN结中存在随机的窄带量子跳线会导致SIN结的单粒子电流-电压特性显着降低。现有理论。该行为可以用作结中此类跳线存在的实验标准。数值估计表明了这种效应的实验表现的可能性。已经提出了检测这种效果的实验方案。