The defects into the hexagonal network of a sp²-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices.

sp ²的六边形网络中的缺陷-杂化碳原子已被证明对石墨烯系统的固有性质有重大影响。在本文中，我们通过空位均匀性测定研究了离子C +轰击诱导的有缺陷的单层至几层石墨烯在78-318 K的低温下G峰和D'谱带的温度依赖性拉曼光谱，该缺陷由单层到多层石墨烯组成。缺陷会导致G峰值的负温度系数增加，其值几乎与D'波段相同。但是，G峰的频率和线宽随层数的变化与D'带相反。它源自无序诱导的拉曼散射过程中G和D'声子中的相关电子-声子相互作用。