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The role of barrier layer temperature in the formation of long and small-diameter TiO 2 nanotube arrays
Journal of Porous Materials ( IF 2.6 ) Pub Date : 2020-07-15 , DOI: 10.1007/s10934-020-00936-7
Vajihe Asgari , Mohammad Noormohammadi , Abdolali Ramazani , Mohammad Almasi Kashi

Small-diameter TiO2 nanotubes (TNTs) are fabricated at a fast growth rate by developing an effective anodization method in an organic electrolyte. Two different temperatures are applied to both sides of sample in order to increase the current density during the anodization process. Here, we use a high temperature for the backside of the sample (direct heating of the barrier oxide layer) in order to increase the current density while keeping the electrolyte at a low temperature to decrease the chemical etching at top of the TNT arrays. Increasing the backside temperature up to 55 °C leads to the formation of longest TNTs with an average diameter of about 17 nm at high-speed TNT growth of about 2000 nm/h under 20 V. Based on the high-field theory and accurate estimation of the barrier layer (BL) temperature, the incremental effect of increasing the BL temperature on the anodization current is also investigated.



中文翻译:

阻挡层温度在长小直径TiO 2纳米管阵列形成中的作用

小直径TiO 2通过开发一种有效的阳极氧化方法,在有机电解质中以快速的速度制造纳米管(TNT)。为了在阳极氧化过程中增加电流密度,将两个不同的温度施加到样品的两侧。在这里,我们将高温用于样品的背面(直接加热阻挡氧化层),以增加电流密度,同时将电解质保持在低温状态,以减少TNT阵列顶部的化学蚀刻。将背面温度提高到55°C会导致在20 V下以大约2000 nm / h的高速TNT生长时,形成平均直径约为17 nm的最长TNT。基于高场理论和准确的估算阻挡层(BL)温度

更新日期:2020-07-15
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