Kinetic Monte Carlo resistive random access memory simulations are used to understand different retention experiments performed at several temperatures. The physics behind resistive switching allows to explain experimental results, in particular the degradation of the conductive filaments with temperature. It is observed that competing mechanisms control resistive switching in this type of experiments and the thermal dependencies involved are key to explain the measurements. Besides, the simulation approach allows to analyze the existence of percolation paths in the device dielectric and the conductive filament density and compactness. Finally, the key physical mechanisms are detected and some clues related to the retention performance and possible technology improvements are unveiled.

中文翻译：

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基于Al：HfO 2的电阻式随机存取存储器中数据保留的动力学蒙特卡洛分析

动力学蒙特卡洛电阻随机存取存储器仿真用于了解在几个温度下执行的不同保留实验。电阻切换背后的物理学原理可以解释实验结果，尤其是导电丝随温度的下降。可以看出，在这种类型的实验中，竞争机制控制了电阻切换，并且所涉及的热依赖性是解释测量结果的关键。此外，仿真方法还可以分析器件电介质中渗透路径的存在以及导电丝的密度和紧密度。最后，检测了关键的物理机制，并揭示了与保留性能和可能的技术改进有关的一些线索。