Flexible photodetectors based on two-dimensional (2D) materials hold the promise to open up an unprecedented era for wearable optoelectronic systems. However, there is a major challenge of the inability to directly deposit 2D materials on polymeric substrates due to their high growth temperature. Here, we demonstrate a novel low-cost method to directly fabricate SnS nanoflakes on the poly-ethylene terephthalate substrates. Moreover, the flexible photodetectors based on SnS nanoflakes feature broadband spectral responses from 355 nm to 1550 nm. The responsivity and detectivity can approach up to 1.28 × 10 3 A W −1 and 3.02 × 10 11 Jones, respectively, under the ultraviolet laser of 355 nm. The devices also exhibit excellent NIR photodetection with a specific responsivity of 69 A W −1 towards the 1550 nm regime. Our research represents an important step toward scalable fabrication of the SnS nanoflakes and this method may pave a path for the ...

中文翻译：

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二维SnS纳米薄片在PET衬底上的低温沉积，用于具有宽带响应能力的柔性光电探测器

基于二维（2D）材料的柔性光电探测器有望为可穿戴光电系统打开一个空前的时代。然而，由于二维材料的高生长温度，其不能直接在聚合物基材上沉积二维材料是一个重大挑战。在这里，我们展示了一种新颖的低成本方法，可以直接在聚对苯二甲酸乙二醇酯基板上制造SnS纳米薄片。此外，基于SnS纳米薄片的柔性光电探测器具有355 nm至1550 nm的宽带光谱响应。在355 nm的紫外线激光下，响应度和检测率分别达到1.28×10 3 AW -1和3.02×10 11 Jones。该器件还具有出色的近红外光检测性能，对1550 nm的光能的响应率为69 AW -1。