The observation of anomalous Hall effect (AHE) in magnetically doped topological insulators brings a new candidate of Hall sensor with low power consumption. In this work, the transport properties and the sensitivity of AHE sensors based on Cr-doped Bi 2 Te 3 thin films were studied. Obvious AHEs induced by ferromagnetic ordering were presented in all Cr x Bi 2- x Te 3 sensors. At the optimized doping concentration of x = 0.09, a high sensitivity of 6625 Ω T −1 was achieved, which has increased by 2.5 times compared to the highest reported one in Cr-doped Bi 2 Te 3 . More importantly, a considerable sensitivity of 4082 Ω T −1 can be obtained up to 20 K, which implies a higher working temperature than other reports. Our findings suggest Cr-doped Bi 2 Te 3 sensor could be a good candidate for highly sensitive AHE sensors and reveal the extraordinary potenti...

中文翻译：

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基于Cr掺杂Bi 2 Te 3拓扑绝缘体薄膜的超灵敏霍尔效应传感器

在磁掺杂拓扑绝缘体中异常霍尔效应（AHE）的观察为霍尔传感器带来了低功耗的新选择。在这项工作中，研究了基于Cr掺杂的Bi 2 Te 3薄膜的AHE传感器的传输性能和灵敏度。在所有Cr x Bi 2- x Te 3传感器中均显示了由铁磁有序感生的明显AHE。在x = 0.09的最佳掺杂浓度下，实现了6625ΩT -1的高灵敏度，与报道的Cr掺杂Bi 2 Te 3中最高的灵敏度相比，灵敏度提高了2.5倍。更重要的是，高达20 K的灵敏度可达到4082ΩT -1，这意味着工作温度要高于其他报告。