Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN$/$GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by sputtering, leads to a reduction in tensile strain at the surface of AlGaN barrier. The diminution in tensile strain forms a pseudo-$p$-type layer (diode-like). This strain reduction has no effect on the bandgap of the AlGaN barrier layer, allowing the gate to withstand a reverse gate bias larger than 100 V. Characterization using the high-resolution transmission electron microscopy combined with the X-ray photoelectron spectroscopy reveals a good TiN$/$AlGaN interface quality and no diffusion of TiN into AlGaN. The effective energy barrier of the rectifying nanoscale TiN gate contact has a relatively large height of 1.1 eV associated with an ideality factor of 1.4. A dramatic drop of the reverse-bias leakage current down to 11 pA$/$mm is measured at −30 V. In addition, electrical measurements show very low gate and drain lag effects of 4.2${\%}$ and 6.7${\%}$, respectively.

中文翻译：

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用于硅衬底上的 AlGaN/GaN HEMT 的整流 TiN 栅极触点的机制

为 AlGaN 开发整流氮化钛 (TiN) 栅极接触技术美元/美元基于 GaN 的微米和纳米 HEMT。通过溅射沉积的较薄的 TiN 膜（范围从 5 nm 到 60 nm）中出现的高压缩应变导致 AlGaN 势垒表面的拉伸应变降低。拉伸应变的减小形成了一个伪$p$型层（类二极管）。这种应变降低对 AlGaN 势垒层的带隙没有影响，允许栅极承受大于 100 V 的反向栅极偏置。 使用高分辨率透射电子显微镜结合 X 射线光电子能谱的表征显示出良好的 TiN美元/美元AlGaN 界面质量和 TiN 没有扩散到 AlGaN 中。整流纳米级 TiN 栅极触点的有效能垒具有相对较大的 1.1 eV 高度，与 1.4 的理想因子相关。反向偏置漏电流急剧下降至 11 pA美元/美元mm 在 -30 V 下测量。此外，电气测量显示非常低的栅极和漏极滞后效应为 4.2${\%}$ 和 6.7${\%}$， 分别。