The memristor, emulating biological synapse, is recognized as one key way to overcome the classic von Neumann bottleneck. In this work, by using active metal Cu as electrode, the device of Cu/GeTeOx/TiN exhibited typical resistive switching characteristic based on the electrochemical metallization mechanism (ECM). Moreover, it realized gradual potentiating and depressing conduction under DC and AC modes, which lead to emulating excitation and inhibition of biological synapses. According to these properties, spike-timing-dependent plasticity (STDP) learning rule was reproduced by applying appropriate pulse sequences. Furthermore, the kinetic Monte Carlo method was utilized to analyze and provide further demonstration for the behaviors of gradual change. These indicated that the device had great potential applied in the neuromorphic computing systems and the properties could be commonly realized by ECM mechanism.

中文翻译：

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基于忆阻器的突触行为实现与KMC方法仿真研究

模拟生物突触的忆阻器被认为是克服经典冯诺依曼瓶颈的一种关键方法。在这项工作中，通过使用活性金属 Cu 作为电极，Cu/GeTeOx/TiN 器件表现出基于电化学金属化机制（ECM）的典型电阻开关特性。此外，它在直流和交流模式下实现了逐渐增强和抑制传导，从而导致模拟生物突触的兴奋和抑制。根据这些特性，通过应用适当的脉冲序列来重现尖峰时间依赖可塑性 (STDP) 学习规则。此外，还利用动力学蒙特卡罗方法对渐变行为进行了分析和进一步论​​证。