A high-speed evanescent-coupled Ge waveguide electro-absorption modulator (EAM) with simple fabrication processes was realized on a silicon-on-insulator platform with a 220 nm top Si layer. Selectively grown Ge with a triangle shape was directly used for Ge waveguides of the EAM. An asymmetric p-i-n junction was designed in the Ge waveguide to provide a strong electric field for Franz–Keldysh effect. The insertion loss of the Ge EAM was 6.2 dB at 1610 nm. The EAM showed the high electro-optic bandwidth of 36 GHz at −1 V. Clear open 56 Gbps eye diagrams were observed at 1610 nm with a dynamic extinction ratio of 2.7 dB and dynamic power consumption of 45 fJ/bit for voltage swing of 3Vpp.

中文翻译：

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56 Gbps 高速锗电吸收调制器

在具有 220 nm 顶部 Si 层的绝缘体上硅平台上实现了具有简单制造工艺的高速消散耦合 Ge 波导电吸收调制器 (EAM)。具有三角形形状的选择性生长的 Ge 直接用于 EAM 的 Ge 波导。Ge 波导中设计了一个不对称的 pin 结，为 Franz-Keldysh 效应提供强电场。Ge EAM 的插入损耗在 1610 nm 处为 6.2 dB。EAM 在 -1 V 下显示了 36 GHz 的高电光带宽。 在 1610 nm 处观察到清晰的开放 56 Gbps 眼图，动态消光比为 2.7 dB，动态功耗为 45 fJ/bit，电压摆幅为 3Vpp .