Abstract III-Sb semiconductors cover the whole 0.29–1.64 eV bandgap range, allowing us to grow several subcells of a multi-junction solar cell lattice-matched to GaSb. Among III-Sb alloys, AlInAsSb exhibits the broadest range of direct bandgaps, making it a promising material for photovoltaic applications. In this work, the behavior of two AlInAsSb/GaSb tandem photovoltaic cells is studied. Material characterization and physics-based 1D modeling are carried out to analyze and discuss performance of the cells. An efficiency of 5.2% is achieved under 1-sun illumination, limited by the AlInAsSb quaternary-alloy properties.

中文翻译：

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AlInAsSb/GaSb 串联电池的研究——迈向基于 GaSb 的多结太阳能电池的第一步

摘要 III-Sb 半导体覆盖整个 0.29-1.64 eV 带隙范围，使我们能够生长与 GaSb 晶格匹配的多结太阳能电池的几个子电池。在 III-Sb 合金中，AlInAsSb 表现出最广泛的直接带隙范围，使其成为光伏应用的有前途的材料。在这项工作中，研究了两个 AlInAsSb/GaSb 串联光伏电池的行为。进行材料表征和基于物理的一维建模以分析和讨论电池的性能。受 AlInAsSb 四元合金特性的限制，在 1-sun 光照下实现了 5.2% 的效率。