The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact (MSC) in the framework of the theory of complex systems. The effect of inhomogeneity of the different microstructures: polycrystalline, monocrystalline, amorphous metal–semiconductor contact surface is investigated, considering a Schottky diode (SD) as a parallel connection of numerous subdiodes. It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system, which consists of parallel connected numerous elementary contacts having different properties and parameters.

中文翻译：

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用复杂系统理论研究金属-半导体接触的电物理特性

这项工作的目的是在复杂系统理论的框架内分析金属-半导体接触 (MSC) 的电性能。研究了不同微结构的不均匀性的影响：多晶、单晶、非晶金属-半导体接触面，将肖特基二极管 (SD) 考虑为多个子二极管的并联连接。已经表明，金属的多晶性将同质接触转化为复杂系统，该系统由并联连接的许多具有不同性质和参数的基本接触组成。